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The TAV2-14LN+ is a 50Ω MMIC E-pHEMT transistor operating from 0.05 to 10 GHz, usable to 12 GHz. It features a typical noise figure of 0.7 dB and gain of 16.4 dB at 6 GHz with +4 V bias. Key electrical parameters include an output IP3 of +30.9 dBm and P1dB of +18.8 dBm at 6 GHz. The device requires external biasing and matching components.
Verify the datasheet revision (Rev B) and ECO number (ECO-025003) match your design requirements. Confirm that external biasing and matching networks are included in your design, as this component does not have integrated matching. Ensure PCB layout adheres to the suggested layout PL-659 for optimal thermal and RF performance.
Select this component when ultra-low noise figure and high linearity are critical within a wide bandwidth. It is designed for applications requiring medium current operation. Note that it is an enhancement mode device requiring specific gate voltage control. Consider the 2x2 mm MCLP package constraints for dense layouts.
This part belongs to Mini-Circuits' portfolio of MMIC E-pHEMT transistors. It is housed in a 2x2 mm 6-lead MCLP package (Case Style MC1630-1). The technology utilizes highly repeatable E-pHEMT processes to ensure consistent performance across manufacturing lots.
No public confirmed substitute part numbers are available in the provided documentation.
The absolute maximum rating for Drain-Source Voltage (VDS) is +5 V.
Yes, the datasheet explicitly states that external biasing and matching are required.
The Human Body Model (HBM) ESD rating is Class 0 (50 V to 250 V) in accordance with ANSI/ESD STM 5.1 - 2001.