TAV2-14LN+

TAV2-14LN+

$2.18
  • Description:RF MOSFET E-PHEMT 4V
  • Series:-

SKU:9a56a02295a6 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 4V
  • Series:-
  • Mfr:Mini-Circuits
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:E-pHEMT
  • Frequency:50MHz ~ 10GHz
  • Gain:23.4dB
  • Voltage - Test:4 V
  • Current Rating (Amps):2µA
  • Noise Figure:2.5dB
  • Current - Test:4 mA
  • Power - Output:19.4dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TDFN Exposed Pad
  • Supplier Device Package:-
  • Configuration:-

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TAV2-14LN+

Overview

The TAV2-14LN+ is a 50Ω MMIC E-pHEMT transistor operating from 0.05 to 10 GHz, usable to 12 GHz. It features a typical noise figure of 0.7 dB and gain of 16.4 dB at 6 GHz with +4 V bias. Key electrical parameters include an output IP3 of +30.9 dBm and P1dB of +18.8 dBm at 6 GHz. The device requires external biasing and matching components.

Feature Summary

  • Combines high gain with extremely low noise figure for lower overall system noise in sensitive receivers.
  • Matches industry-leading IP3 performance relative to device size and power consumption.
  • Enhanced linearity over a broad frequency range suitable for driver amplifiers and linearized transmit systems.

Applications

  • Driver amplifiers for complex waveform up converter paths
  • Drivers in linearized transmit systems
  • Sensitive receivers in communications systems

Procurement Notes

Verify the datasheet revision (Rev B) and ECO number (ECO-025003) match your design requirements. Confirm that external biasing and matching networks are included in your design, as this component does not have integrated matching. Ensure PCB layout adheres to the suggested layout PL-659 for optimal thermal and RF performance.

Selection Notes

Select this component when ultra-low noise figure and high linearity are critical within a wide bandwidth. It is designed for applications requiring medium current operation. Note that it is an enhancement mode device requiring specific gate voltage control. Consider the 2x2 mm MCLP package constraints for dense layouts.

Part Context

This part belongs to Mini-Circuits' portfolio of MMIC E-pHEMT transistors. It is housed in a 2x2 mm 6-lead MCLP package (Case Style MC1630-1). The technology utilizes highly repeatable E-pHEMT processes to ensure consistent performance across manufacturing lots.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum drain-source voltage?

The absolute maximum rating for Drain-Source Voltage (VDS) is +5 V.

Does the TAV2-14LN+ require external matching?

Yes, the datasheet explicitly states that external biasing and matching are required.

What is the ESD rating for this component?

The Human Body Model (HBM) ESD rating is Class 0 (50 V to 250 V) in accordance with ANSI/ESD STM 5.1 - 2001.

TAV2-14LN+TAV2-14LN+
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