TC1550TG-G

$6.48

Description：MOSFET N/P-CH 500V 8SOIC
Series：-

SKU:4fe7af40f1e5 Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 500V 8SOIC
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：500V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：60Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：55pF @ 25V, 70pF @ 25V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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TC1550TG-G

Overview

The TC1550TG-G is a dual enhancement-mode MOSFET array featuring independent N-channel and P-channel devices within an 8-lead SOIC package. It provides a drain-to-source breakdown voltage of 500V for the N-channel and -500V for the P-channel. The N-channel exhibits a maximum on-state resistance of 60 Ohms at VGS=10V, while the P-channel reaches 125 Ohms under identical conditions. Input capacitance is limited to 55pF for the N-channel and 70pF for the P-channel. Operating temperatures range from -55°C to +150°C.

Feature Summary

Electrically isolated N- and P-channels
Free from secondary breakdowns
Low input and output leakage

Applications

High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the 'Green' suffix designation. Ensure storage conditions respect moisture sensitivity levels prior to soldering. Validate that the specific lot number corresponds with current production batches to guarantee parameter consistency.

Selection Notes

Select this component for high-voltage switching applications requiring complementary channel operation in a compact surface-mount footprint. Consider the positive temperature coefficient inherent in MOS structures to prevent thermal runaway. Evaluate the low threshold voltage requirements against available drive logic levels to ensure reliable turn-on characteristics across the specified operating temperature range.

Part Context

This device belongs to the TC1550 series manufactured by Microchip Technology (formerly Supertex). It utilizes an advanced vertical DMOS structure combined with silicon-gate manufacturing processes. The design aims to provide bipolar-like power handling capabilities alongside the high input impedance characteristic of MOS technology.