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The TF202THC-4-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a maximum drain current of 1 mA and a power dissipation rating of 100 mW. The device utilizes a 3-VTFP surface-mount package with a maximum junction temperature of 150°C. Key electrical characteristics include a gate-source cutoff voltage of 200 mV at 1 µA and a maximum input capacitance of 3.5 pF at 5 V. The standard factory packaging quantity is 8,000 units.
This component has been officially discontinued by the manufacturer. Availability is restricted to existing stock held by distributors or secondary market suppliers such as Rochester Electronics. Verify part authenticity and storage conditions carefully when sourcing from non-primary channels due to end-of-life status.
Designers should evaluate the specific Idss range and Vgs(off) parameters against circuit requirements before selection. Consider the thermal limitations imposed by the 100 mW power dissipation rating in enclosed environments. Ensure the chosen replacement maintains compatibility with the 3-VTFP footprint if physical constraints are critical.
The TF202 series belongs to onsemi's discrete transistor portfolio, specifically designed for low-power analog applications. These devices are commonly integrated into audio front-end modules and sensor interface circuits where high input impedance and minimal noise contribution are required.
Verify functional equivalence with other N-channel JFETs in the 3-VTFP package. Cross-reference tools may suggest alternatives, but datasheet parameter matching is essential for performance consistency.