TF252-5-TL-H

TF252-5-TL-H

  • Description:JFET N-CH 1MA 3USFP
  • Series:-

SKU:dc3974c62223 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 1MA 3USFP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):210 µA @ 2 V
  • Current Drain (Id) - Max:1 mA
  • Voltage - Cutoff (VGS off) @ Id:100 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds:3.1pF @ 2V
  • Resistance - RDS(On):-
  • Power - Max:30 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1123
  • Supplier Device Package:3-USFP
  • Grade:-
  • Qualification:-

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TF252-5-TL-H

Overview

The TF252-5-TL-H is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for surface-mount applications and utilizes a compact 3-USFP package to facilitate circuit miniaturization. The device features a continuous drain current rating of 1 mA and a power dissipation capacity of 30 mW. Key electrical characteristics include a typical voltage gain of 1.0 dB under specified test conditions, making it suitable for low-power signal processing tasks.

Feature Summary

  • High voltage gain performance for effective signal amplification
  • Ultrasmall surface-mount package design enables significant board space reduction
  • Optimized for low-power consumption in portable and miniature electronic systems

Applications

  • Low-noise preamplifier stages in audio equipment
  • Signal conditioning circuits in portable consumer electronics
  • Impedance matching buffers in sensor interfaces

Procurement Notes

Verify the component authenticity through official onsemi channels or authorized distributors. Confirm that the received parts match the TF252-5-TL-H designation and 3-USFP package type. Ensure storage conditions comply with moisture sensitivity levels to maintain junction integrity before soldering.

Selection Notes

Select this JFET when high input impedance and low noise are required in space-constrained designs. The 1 mA current rating suits low-signal applications. Consider the 3-USFP footprint constraints during PCB layout to ensure adequate thermal clearance and mechanical stability for the small form factor.

Part Context

This component belongs to the discrete transistor category within onsemi's portfolio. It serves as a specialized active device for analog signal paths, distinct from logic or power switching components. The part supports the company's focus on intelligent sensing and power technologies by enabling efficient front-end signal acquisition.

Replacement Considerations

Cross-reference with other N-channel JFETs in the 3-USFP package offering similar 1 mA current ratings. Verify pinout compatibility and gain specifications to ensure functional equivalence without redesigning the surrounding bias network.

TF252-5-TL-HTF252-5-TL-H

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