TF410-TL-H

Overview

The TF410-TL-H is an N-channel JFET from onsemi, housed in a 3-USFP surface-mount package. It supports a maximum drain-source voltage of 40 V and a continuous drain current of 1 mA. The device features a transconductance range of 50 to 130 mS and a maximum power dissipation of 30 mW. Designed for high-temperature operation, it functions up to a junction temperature of +150 °C. This component is optimized for compact circuit designs requiring low-power switching or amplification capabilities within a small footprint.

Feature Summary

• N-channel JFET configuration for signal processing applications
• Compact 3-USFP surface-mount packaging for space-constrained designs
• High-temperature operational capability up to +150 °C junction temperature

Applications

• Low-noise amplifier circuits
• Analog switch implementations
• Impedance matching networks

Procurement Notes

Verify the specific suffix requirements for your order, as variants like TF410-TL-HX may differ in packaging format. Confirm that the 3-USFP package aligns with your PCB layout constraints. Ensure the 1 mA current rating meets your circuit's operational demands. Check for obsolescence status, as some distributors list this part as discontinued. Validate thermal management strategies given the 30 mW power dissipation limit.

Selection Notes

Select the TF410-TL-H when a compact N-channel JFET with moderate voltage handling is required. Its 40 V rating suits low-voltage analog systems. Consider the 50–130 mS transconductance for gain requirements. The USFP package facilitates automated assembly. Evaluate thermal performance if operating near the 150 °C limit. Compare against other JFETs if higher current capacity is needed beyond 1 mA.

Part Context

This component belongs to onsemi's discrete semiconductor transistor portfolio, specifically within the JFET category. It complements their broader range of analog and power devices. The TF410 series targets applications needing reliable, low-power field-effect transistor solutions. It fits into designs where traditional bipolar transistors are less suitable due to input impedance requirements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.