TF412ST5G

$0.40

Description：JFET N-CH 30V 10MA SOT883
Series：-

SKU:a96b3051dea9 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 30V 10MA SOT883
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：1.2 mA @ 10 V
Current Drain (Id) - Max：10 mA
Voltage - Cutoff (VGS off) @ Id：180 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
Resistance - RDS(On)：-
Power - Max：100 mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-XFDFN
Supplier Device Package：SOT-883 (XDFN3) (1x0.6)
Grade：-
Qualification：-

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TF412ST5G

Overview

The TF412ST5G is a single N-channel JFET from onsemi, housed in an SOT-883-3 surface-mount package. It features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. The device supports a continuous drain current of 10 mA with a power dissipation rating of 100 mW. Electrical characteristics include a zero-gate-voltage drain current of 3 mA and a gate-source cutoff voltage of -800 mV. The minimum forward transconductance is specified at 3 mS. Operating temperatures range from -55 C to +150 C.

Feature Summary

Designed for low-frequency general-purpose amplifiers and impedance converters
Ultra-small SOT-883 package facilitates terminal product miniaturization
Complies with halogen-free environmental standards

Applications

Low-frequency general-purpose amplification
Impedance conversion circuits
Sensor signal processing applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer datasheet to confirm pinout compatibility and electrical tolerances. Ensure the selected component matches the required SOT-883-3 footprint dimensions for PCB layout integration. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.

Selection Notes

Select this component when compact form factors are required for N-channel JFET applications. The SOT-883-3 package offers significant size reduction compared to traditional leads. Consider the 30 V breakdown voltage limits and 10 mA current capacity during circuit design to ensure operation within safe absolute maximum ratings.

Part Context

This part belongs to the TF412S series of N-channel junction field-effect transistors manufactured by onsemi. The series utilizes silicon technology and is intended for discrete transistor applications requiring small signal handling capabilities in a miniature surface-mount configuration.