TF412T5G

$0.47

Description：NCH J-FET SOT-883
Series：-

SKU:ced58ad08e62 Category: JFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH J-FET SOT-883
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：1.2 mA @ 10 V
Current Drain (Id) - Max：10 mA
Voltage - Cutoff (VGS off) @ Id：1.5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds：4pF @ 10V
Resistance - RDS(On)：-
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-XFDFN
Supplier Device Package：SOT-883 (XDFN3) (1x0.6)
Grade：-
Qualification：-

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TF412T5G

Overview

The TF412T5G is an N-channel JFET from onsemi, designed for low-frequency general-purpose amplifiers and impedance converters. It features a maximum drain-source voltage of 30V and a continuous drain current of 10mA. The device exhibits extremely low gate-source leakage current, with a maximum value of -1.0nA at VGS=-20V and VDS=0V. Typical input capacitance is 4pF under standard test conditions (VDS=10V, VGS=0V, f=1MHz). It operates within a temperature range of -55°C to +150°C and is housed in a compact SOT-883 package.

Feature Summary

Ultra-low gate-source leakage current ensures high input impedance suitable for precision signal acquisition.
Minimal input capacitance reduces signal attenuation in sensitive circuit applications.
Compact SOT-883 package facilitates terminal product miniaturization.
Compliant with halogen-free environmental standards.

Applications

Low-frequency general-purpose amplifiers
Impedance converters
Sensor signal processing

Procurement Notes

Verify the specific suffix 'T5G' against official datasheets to confirm tape-and-reel packaging details. Ensure compatibility with SOT-883 footprint requirements during PCB layout. Confirm halogen-free status if required by project specifications. Cross-reference absolute maximum ratings with system operating conditions to prevent overstress.

Selection Notes

Select this component when high input impedance and minimal leakage are critical for signal integrity. The small package size makes it ideal for space-constrained designs. Verify that the 30V breakdown voltage meets the application's peak voltage requirements. Consider the low input capacitance for maintaining signal fidelity in high-impedance source circuits.

Part Context

This part belongs to the TF412S series of N-channel JFETs manufactured by onsemi. It shares core electrical characteristics with other variants in the family but differs in packaging or reel configuration. The device is silicon-based and intended for surface-mount assembly, supporting modern automated manufacturing processes while maintaining robust performance in analog signal paths.