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Product Detailed Parameters
- Description：LIGHT-CONTROLLING FLASH
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：5.4V @ 4V, 150A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The TIG030TS is an N-channel IGBT manufactured by SANYO Semiconductor Co.,Ltd. It features a low-saturation voltage and supports 4V drive with built-in gate-to-emitter protection diodes. The device guarantees a dv/dt of 400 V/µs. Absolute maximum ratings include a collector-to-emitter voltage (V_CES) of 400 V, a pulse collector current (I_CP) of 150 A, and a channel temperature (Tch) of 150 °C. Electrical characteristics specify a breakdown voltage of 400 V at IC=2mA, a saturation voltage (V_CE(sat)) of 3.7 to 5.4 V at IC=150A and VGE=4V, and input capacitance (Cies) of 2610 pF at VCE=10V and f=1MHz.
Feature Summary
- Low-saturation voltage operation
- Support for 4V drive signals
- Built-in gate-to-emitter protection diode
- Guaranteed dv/dt capability
Applications
- Light-controlling flash applications
Procurement Notes
Verify the manufacturer origin carefully as the datasheet originates from SANYO Semiconductor Co.,Ltd., while the requested brand is onsemi. Confirm if this specific part number represents a legacy product or a rebranded component within the onsemi portfolio. Ensure the package dimensions and pinout match your design requirements before procurement.
Selection Notes
Select this component for applications requiring high pulse currents up to 150 A and robust dv/dt immunity. Ensure the gate series resistance RG is maintained at or above 50 Ohms to protect against excessive turn-off voltage gradients. Verify that the thermal management system can handle the specified channel temperature limits under load conditions.
Part Context
This component is an N-channel Insulated Gate Bipolar Transistor designed for high-current switching tasks. It utilizes a TSSOP8 package configuration with multiple collector and emitter pins to manage large currents effectively. The device integrates internal protection mechanisms to enhance reliability during rapid voltage transitions in pulsed power environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the guaranteed dv/dt rating for the TIG030TS?
The device guarantees a collector-to-emitter dv/dt of 400 V/µs when VCE is less than or equal to 320V and starting Tch is 25°C.
How should the gate series resistance be selected?
A gate series resistance (RG) of 50Ω or greater is recommended for protection during turn-off. However, lower values may be used if the actual circuit evaluation confirms that dv/dt remains below 400V/µs.
What is the maximum pulse collector current?
The maximum pulse collector current (I_CP) is 150 A, measured with a pulse width (PW) of 500µs or less, a duty cycle of 0.5% or less, and a capacitor (CM) of 400µF.
