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The onsemi TIG032TS-TL-H is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum drain-source voltage of 400 V and a continuous collector current rating of 180 A. The device exhibits a low saturation voltage of 2.5 V, contributing to efficient power conversion. Manufactured using silicon technology, this component is housed in a surface-mount package suitable for automated assembly processes.
Verify the specific datasheet version and ordering information directly from onsemi official documentation before procurement. Confirm that the TIG032TS-TL-H part number matches the required electrical specifications and package type for your design. Ensure compliance with all relevant safety and quality standards specified by the manufacturer for industrial-grade components.
Select this component when designing circuits requiring high current capacity and moderate voltage blocking capabilities. The 180 A rating and 400 V breakdown make it suitable for robust power management solutions. Consider the thermal characteristics and packaging requirements to ensure proper heat dissipation and mechanical integration within the target application environment.
This IGBT belongs to the single transistor category within onsemi's discrete semiconductor portfolio. It is engineered for reliability in demanding environments, leveraging silicon technology to deliver consistent performance. The product line focuses on providing efficient power switching solutions for modern electronic systems.
Consult onsemi official documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' IGBTs without verifying pinout, electrical parameters, and thermal characteristics against the original specification sheet.