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Product Detailed Parameters
- Description：IGBT 430V TO-220F-3FS
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：430 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：5V @ 15V, 240A
- Power - Max：30 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：46ns/140ns
- Test Condition：320V, 240A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F-3FS
- Grade：-
- Qualification：-
Download product information
Overview
The TIG056BF-1E is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter breakdown voltage of 430 V and supports a continuous collector current of 240 A. The device operates with a maximum power dissipation of 30 W at 25°C and has a junction temperature rating of 150°C. It utilizes a TO-220FI(LS) through-hole package. Switching characteristics include a turn-on time of 46 ns and a turn-off time of 140 ns under test conditions of 320 V, 240 A, 10 Ω gate resistance, and 15 V gate drive.
Feature Summary
- N-channel IGBT technology for high-power switching applications
- Through-hole TO-220FI(LS) package for robust mounting
- High surge current capability supporting demanding load conditions
Applications
- High power high speed switching applications
- Industrial motor control systems
- Power supply circuits requiring high current handling
Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Availability is restricted or non-existent through standard distribution channels. Verification of authenticity and condition is critical when sourcing from secondary markets. Engineers should confirm the specific suffix meaning if functional differences exist between variants, though the base model indicates standard specifications.
Selection Notes
Designers must account for the limited thermal management capabilities inherent in the TO-220 package, given the 30 W power dissipation rating. The 430 V voltage rating provides margin for inductive loads but requires careful snubber design to prevent overvoltage events. Verify that the required gate drive voltage aligns with the specified 15 V test conditions for optimal switching performance.
Part Context
The TIG056BF belongs to the TIG056BF series of N-channel IGBTs from onsemi. It is part of a family designed for high-power applications, sharing similar form factors and electrical profiles with other devices in the TIG series. The product line targets industrial and commercial power conversion needs where reliable high-current switching is essential.
Replacement Considerations
Direct pin-compatible replacements are not explicitly confirmed in public documentation due to the EOL status. Designers should evaluate alternative IGBTs with matching 430V/240A ratings and TO-220 packaging, ensuring switching times and Vce(sat) values meet circuit requirements.
