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Product Detailed Parameters
- Description：IGBT 400V 8ECH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：5.6V @ 4V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-ECH
- Grade：-
- Qualification：-
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Overview
The TIG058E8-TL-H is an N-Channel IGBT manufactured by onsemi, designed for light-controlling flash applications. It features a 400V collector-to-emitter breakdown voltage and supports a continuous collector current of 150A. The device operates with a low gate drive voltage of 4V and exhibits a saturation voltage of 4.0V to 5.6V at 100A. Key electrical parameters include a maximum dv/dt rating of 400 V/μs and a channel temperature limit of 150°C. It is housed in the ECH8 package with a mounting height of 0.9mm.
Feature Summary
- Low-saturation voltage design
- Low voltage drive capability (4V)
- Built-in Gate-to-Emitter protection diode
- dv/dt guarantee
Applications
- Light-controlling flash applications
Procurement Notes
Verify the component against the official datasheet A1381/7 dated September 2013. Confirm the part marking matches TIG058E8-TL-H and the package type is ECH8. Ensure the supplier provides documentation confirming Pb-free and Halogen-free compliance as specified in the ordering information section.
Selection Notes
Select this component when designing circuits requiring a 400V rated N-Channel IGBT with high pulse current handling up to 150A. The low gate drive requirement of 4V simplifies driver circuitry. Ensure the application maintains the collector voltage gradient below 400 V/μs during turn-off or incorporates a gate series resistance greater than 230Ω to protect the device.
Part Context
This device belongs to the TIG058 series of N-Channel IGBTs from onsemi. It is specifically engineered for flash lamp control systems where fast switching and robust performance under high current pulses are critical. The ECH8 package allows for compact surface-mount integration.
Replacement Considerations
Direct substitutes must match the 400V rating, 150A current capacity, and ECH8 package dimensions. Verify that any alternative device also supports the 4V gate drive and includes similar dv/dt characteristics or requires comparable external snubber networks.
FAQ
What is the recommended gate series resistance for protection?
A gate series resistance (RG) of 230Ω or greater is recommended for protection during turn-off. However, if the actual circuit dv/dt remains below 400 V/μs, a lower resistance may be used.
How is the pinout configured for the ECH8 package?
Pins 1, 2, and 3 are connected to the Emitter. Pin 4 is the Gate. Pins 5, 6, 7, and 8 are connected to the Collector.
What is the maximum allowable dv/dt for this device?
The maximum collector-to-emitter dv/dt is guaranteed at 400 V/μs when the collector voltage is less than or equal to 320V and starting at a case temperature of 25°C.
