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Product Detailed Parameters
- Description：IGBT 400V ECH8
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：7V @ 2.5V, 100A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-ECH
- Grade：-
- Qualification：-
Download product information
Overview
The TIG064E8-TL-H is an N-channel IGBT manufactured by SANYO Semiconductors, now part of onsemi. It features a low-saturation voltage and supports low-voltage drive at 2.5V. The device includes a built-in gate-to-emitter protection diode and guarantees dv/dt performance. Key electrical ratings include a collector-to-emitter breakdown voltage of 400V, a maximum collector current pulse of 150A, and a channel temperature limit of 150°C. It is housed in the ECH8 package with a mounting height of 0.9mm.
Feature Summary
- Low saturation voltage for efficient power handling
- Supports low voltage drive at 2.5V
- Built-in gate-to-emitter protection diode
- Guaranteed dv/dt capability
Applications
- Light-controlling flash applications
Procurement Notes
Verify the manufacturer origin as SANYO Semiconductor Co., Ltd., which has been acquired by onsemi. Confirm the specific ordering suffix TL-H indicates tape-and-reel packaging with 3000 pieces per reel. Ensure compliance with halogen-free requirements if specified for your assembly process. Check for any updates to the datasheet version A1602-1/7 regarding potential specification changes.
Selection Notes
Select this component for circuits requiring high voltage blocking up to 400V with fast switching characteristics. Consider the 2.5V gate drive requirement when designing the driver circuitry. Ensure the thermal management design accommodates the 150°C channel temperature limit. Verify that the external gate resistance meets the recommended minimum of 160Ω to protect against excessive dv/dt during turn-off.
Part Context
This IGBT belongs to the SANYO Semiconductor product line, specifically designed for general electronics equipment. It is distinct from automotive or medical grade parts, as it lacks specific certifications for those sectors. The ECH8 package provides a compact footprint suitable for surface mount applications where space is constrained.
Replacement Considerations
No direct public substitute part numbers are documented in the provided datasheet. Evaluate alternative N-channel IGBTs with similar 400V ratings and ECH8-compatible packages. Ensure replacement devices meet the 2.5V drive voltage and dv/dt specifications.
