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Product Detailed Parameters
- Description：IGBT 400V 8SOP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：5V @ 4V, 150A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TIG066SS is an N-channel IGBT manufactured by onsemi, designed for light-controlling flash applications. It features a collector-to-emitter breakdown voltage of 400 V and a maximum pulse collector current of 150 A. The device operates with a gate-to-emitter threshold voltage ranging from 0.4 V to 1.0 V and exhibits a saturation voltage between 3.8 V and 5 V at 150 A. Electrical characteristics include an input capacitance of 5100 pF and a fall time of 270 ns under specified resistive load conditions. The component is housed in an SOP-8 package.
Feature Summary
- Enhancement-type N-channel configuration optimized for high-speed switching operations
- Integrated gate-to-emitter protection diode to safeguard against transient voltage spikes
- Low-saturation voltage design enabling efficient power handling at 4.0V drive levels
Applications
- Light-controlling flash driver circuits
- High-speed switching power modules
- Pulse power supply systems
Procurement Notes
Verify the manufacturer origin carefully as this part was originally produced by Sanyo Semiconductor, which has since been acquired by onsemi. Confirm that the specific ordering suffix matches the required tape-and-reel packing quantity of 1000 pieces per reel. Ensure the documentation aligns with the current onsemi product portfolio rather than legacy Sanyo specifications.
Selection Notes
Select this component when designing circuits requiring a 400 V blocking capability with high pulse current tolerance up to 150 A. Ensure the gate drive circuit provides a minimum of 4.0 V to achieve optimal saturation performance. Verify that the application's dv/dt requirements remain below the 1500 V/μs limit during turn-off transitions to prevent device damage.
Part Context
This IGBT belongs to the specialized semiconductor lineup originally developed by Sanyo Semiconductor before its acquisition by onsemi. It serves as a discrete switching element within power electronics architectures, specifically targeting applications demanding rapid response times and robust isolation characteristics in compact surface-mount packages.
Replacement Considerations
Direct cross-reference data is not available in the provided documentation. Evaluate potential substitutes based on matching 400 V breakdown voltage, SOP-8 footprint compatibility, and similar saturation voltage profiles at equivalent current loads.
