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Product Detailed Parameters
- Description：IGBT NPT 600V 27A TO-220FI
- Series：-
- Mfr：onsemi
- Package：Bag
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：27 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 15A
- Power - Max：2 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：95 nC
- Td (on/off) @ 25°C：65ns/250ns
- Test Condition：300V, 15A, 30Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220FI(LS)
- Grade：-
- Qualification：-
Download product information
Overview
The TIG110BF is a single NPT (Non-Punch-Through) IGBT manufactured by onsemi, designed for through-hole mounting in the TO-220FI(LS) package. It features a 600 V collector-emitter voltage rating and a continuous collector current capacity of 27 A. The device has a maximum power dissipation of 2 W and a gate charge of 95 nC. Operating within a temperature range from -55°C to +150°C junction temperature, it serves as a robust switching component for medium-power applications requiring reliable high-voltage control.
Feature Summary
- NPT technology for stable switching performance
- Through-hole TO-220FI(LS) packaging
- Standard gate input type
Applications
- Motor drives
- Power supplies
- Industrial inverters
Procurement Notes
Verify the obsolete status of this specific part number before finalizing design-in decisions. Confirm that the TO-220FI(LS) lead frame configuration matches your thermal and mechanical requirements. Ensure compatibility with existing PCB footprints and assembly processes for through-hole technology. Check for updated replacement recommendations from onsemi if long-term supply assurance is required.
Selection Notes
Select this component for applications requiring a 600 V blocking capability and moderate current handling up to 27 A. The low gate charge facilitates efficient drive circuit design. Consider the thermal resistance inherent to the TO-220FI(LS) package when designing heat sinking solutions. Validate that the 2 W power dissipation limit aligns with the expected duty cycle and ambient operating conditions of the target system.
Part Context
This IGBT belongs to onsemi's discrete transistor portfolio, specifically within the single IGBT category. It utilizes Non-Punch-Through (NPT) wafer technology, which offers improved short-circuit ruggedness compared to punch-through designs. The product falls under the broader intelligent power and sensing technologies division, targeting industrial and automotive markets where reliability is critical.
Replacement Considerations
The datasheet indicates this part is obsolete. Consult onsemi for qualified replacements such as newer generations of 600V IGBTs in similar packages. Verify pinout compatibility and electrical parameter equivalence before substitution.
