TIP35B-S

Single Bipolar Transistors Overview

The TIP35B-S is an NPN bipolar junction transistor manufactured by Bourns Inc., housed in a TO-218-3 (SOT-93) through-hole package. It features a collector-emitter voltage rating of 80 V and a continuous collector current capacity of 25 A. The device has a maximum power dissipation of 3.5 W. It serves as the complementary counterpart to the PNP TIP36 series, including types TIP36, TIP36A, TIP36B, and TIP36C.

Single Bipolar Transistors Feature Summary

• Complements the TIP36 series for push-pull configurations
• High current handling capability up to 25 A
• Robust 80 V breakdown voltage rating

Single Bipolar Transistors Applications

• Power amplifier circuits
• Switching applications requiring high current
• Complementary pairs with TIP36 series transistors

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'S' against the manufacturer's official documentation to confirm the exact package type and electrical ratings. Ensure the ordering information matches the required TO-218-3 form factor and that the component meets the necessary safety standards for the intended application environment.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor is required to complement a PNP device from the TIP36 family. Consider the 3.5 W power dissipation limit and the need for appropriate thermal management solutions given the 25 A current rating and TO-218-3 package constraints.

Single Bipolar Transistors Part Context

This part belongs to the general-purpose power transistor category within Bourns Inc.'s discrete semiconductor portfolio. It is designed for use in power electronics where high current switching or amplification is necessary, providing a matched pair solution alongside its PNP counterparts.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.