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TJ8S06M3L(T6L1,NQ) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 60V 8A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TJ8S06M3L(T6L1,NQ)
- Description：MOSFET P-CH 60V 8A DPAK
- Series：U-MOSVI
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：104mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds：890 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：27W (Tc)
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK+
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for TJ8S06M3L(T6L1,NQ)
Single FETs, MOSFETs Overview
The TJ8S06M3L(T6L1,NQ) is a P-channel MOSFET from Toshiba’s U-MOSVI series, designed for automotive applications. It features a 60V drain-source voltage and an 8A continuous drain current at ambient temperature. The device utilizes a DPAK+ surface-mount package with a maximum power dissipation of 27W at case temperature. Key electrical characteristics include a gate charge of 124 nC at 10V and an input capacitance of 6290 pF at 10V. It operates up to a junction temperature of 175°C and holds AEC-Q101 qualification.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High thermal performance enabled by DPAK+ surface mount packaging
- Optimized switching characteristics via low gate charge design
Single FETs, MOSFETs Applications
- Automotive motor drivers
- DC-DC converters
- Switching voltage regulators
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix (T6L1,NQ) to ensure correct tape-and-reel configuration and specific manufacturing lot attributes. Confirm that the procurement source provides official documentation matching the U-MOSVI series specifications. Ensure compatibility with automotive quality requirements before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component when a robust P-channel solution is required for automotive environments. The 60V rating suits standard vehicle electrical systems. Compare the 8A current capability against load requirements. Consider the DPAK+ footprint for PCB layout constraints. Verify thermal management needs align with the 27W case dissipation limit.
Single FETs, MOSFETs Part Context
This device belongs to Toshiba’s U-MOSVI family, which focuses on advanced vertical MOSFET technology for high-efficiency power switching. The series is specifically engineered to meet the stringent durability and performance demands of modern automotive electronics, offering improved ruggedness compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same TJ series, such as the TJ50S06M3L(T6L1,NQ), noting differences in current handling capabilities. Ensure any replacement maintains the DPAK+ package outline and AEC-Q101 certification for seamless integration.
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