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TK10A50D(STA4,Q,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 500V 10A TO220SIS. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK10A50D(STA4,Q,M)
- Description：MOSFET N-CH 500V 10A TO220SIS
- Series：π-MOSVII
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：720mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1050 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for TK10A50D(STA4,Q,M)
Single FETs, MOSFETs Overview
The TK10A50D(STA4,Q,M) is a silicon N-channel MOSFET utilizing Toshiba's π-MOS VII technology. It features a drain-source voltage of 500 V and a continuous drain current of 10 A at 25°C. The typical drain-source on-resistance is 0.62 Ω, with a maximum of 0.72 Ω. Power dissipation reaches 45 W at a case temperature of 25°C. The device operates within a channel temperature range of -55°C to 150°C and includes avalanche energy ratings of 264 mJ.
Single FETs, MOSFETs Feature Summary
- Utilizes π-MOS VII technology for low on-resistance and high forward transfer admittance
- Capable of handling repetitive avalanche energy up to 4.5 mJ
- Features low leakage current of 10 μA maximum at rated voltage
Single FETs, MOSFETs Applications
- Switching regulator circuits
- DC-DC converter designs
- Motor driver applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm package type and environmental compliance status. Ensure that thermal management designs account for the specified junction-to-case thermal resistance. Confirm RoHS compatibility requirements with the manufacturer prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a 500 V rating and 10 A continuous current capability are required in a TO-220SIS package. Consider the 0.62 Ω typical on-resistance for conduction loss calculations. Evaluate the 264 mJ single pulse avalanche energy rating if inductive load switching is anticipated in the target application design.
Single FETs, MOSFETs Part Context
This part belongs to the TK10A50D series manufactured by Toshiba Semiconductor and Storage. It is designed as a general-purpose power switch utilizing advanced planar MOS architecture. The device is housed in a JEDEC SC-67 compatible outline, providing robust thermal performance for through-hole mounting configurations.
Single FETs, MOSFETs Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching voltage, current, and package specifications.
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