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TK10A60W5,S5VX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 9.7A TO220SIS. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK10A60W5,S5VX
- Description：MOSFET N-CH 600V 9.7A TO220SIS
- Series：DTMOSIV
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 300 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220SIS
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for TK10A60W5,S5VX
Single FETs, MOSFETs Overview
The TK10A60W5,S5VX is a single N-channel enhancement-mode MOSFET from Toshiba's DTMOSIV series, designed for through-hole mounting in TO-220SIS packages. It features a 600 V drain-source voltage rating and supports continuous drain currents of up to 9.7 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 327 mΩ at 10 V gate drive and operates with a junction temperature range extending to +150°C.
Single FETs, MOSFETs Feature Summary
- DTMOSIV technology provides optimized switching performance and low conduction losses
- High breakdown voltage capability suitable for high-voltage power applications
- Robust thermal design supporting significant power dissipation in standard packages
Single FETs, MOSFETs Applications
- Switching power supply circuits
- Motor control systems
- Industrial power conversion
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix against official Toshiba documentation to confirm package variant and tape/reel specifications. Ensure the component matches the required thermal resistance ratings for your specific heatsinking configuration. Confirm RoHS compliance status directly with the manufacturer or authorized distributor records prior to final procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 600 V blocking capability with moderate current handling. Compare the 327 mΩ on-resistance against system efficiency targets. Evaluate the TO-220SIS package thermal characteristics against your enclosure constraints. Ensure gate drive voltages remain within the specified limits to maintain safe operating area boundaries during switching transitions.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba's DTMOSIV family of silicon MOSFETs, which utilize advanced cell structure technology to reduce on-resistance while maintaining high voltage tolerance. The series is widely used in general-purpose power switching applications where reliability and thermal performance are critical requirements for long-term operation.
Single FETs, MOSFETs Replacement Considerations
Consult official Toshiba substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when considering third-party equivalents to ensure mechanical and electrical compatibility.
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