TK25N60X5,S1F

$5.00

Description：MOSFET N-CH 600V 25A TO247
Series：DTMOSIV-H
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:480866cc3715 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK25N60X5,S1F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 25A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK25N60X5,S1F

Description：MOSFET N-CH 600V 25A TO247
Series：DTMOSIV-H
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：140mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for TK25N60X5,S1F

TK25N60X5,S1F

Single FETs, MOSFETs Overview

The TK25N60X5,S1F is an N-channel Power MOSFET from Toshiba's DTMOS IV-H series, designed for high-efficiency switching applications. It features a 600V drain-source voltage rating and supports a continuous drain current of 25A at ambient temperature. The device utilizes a TO-247 through-hole package to facilitate thermal management, with a maximum power dissipation of 180W at case temperature. Key electrical characteristics include a gate threshold voltage of 4.5V maximum at 1.2mA and a gate charge of 60nC at 10V. The input capacitance is specified at 2400pF maximum at 300V, ensuring reliable operation in voltage regulator circuits.

Single FETs, MOSFETs Feature Summary

DTMOS IV-H Super Junction technology enables low on-resistance and fast switching performance.
Robust thermal design allows for high power dissipation in through-hole packages.
Optimized gate charge characteristics support efficient drive requirements.

Single FETs, MOSFETs Applications

Switching voltage regulators
High-frequency power conversion circuits
Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S1F against official Toshiba documentation to confirm pinout and packaging details. Ensure compatibility with existing thermal management solutions due to the TO-247 form factor. Cross-reference datasheet revisions to confirm RoHS compliance status and any updates to electrical limits before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating and 25A continuous current capability are required in a through-hole configuration. The TO-247 package offers superior heat sinking compared to surface-mount alternatives. Consider the 140mΩ on-resistance at 10V drive for conduction loss calculations in medium-power applications requiring robust reliability.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's DTMOS IV-H family, which integrates super junction technology for improved efficiency. The TK25N60X5,S1F variant specifically denotes the TO-247 package style, distinguishing it from other package options like TO-220SIS within the same electrical specification range. This family targets general-purpose high-voltage switching needs.

Single FETs, MOSFETs Replacement Considerations

The FCPF125N65S3 is listed as a similar alternative by distributors. Verify that the substitute matches the 600V/650V rating, 25A current capacity, and TO-247 package dimensions to ensure mechanical and electrical interchangeability without circuit redesign.