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TK7S10N1Z,LXHQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 100V 7A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TK7S10N1Z,LXHQ
- Description：MOSFET N-CH 100V 7A DPAK
- Series：U-MOSVIII-H
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：48mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：175°C
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK+
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for TK7S10N1Z,LXHQ
Single FETs, MOSFETs Overview
The TK7S10N1Z,LXHQ is a surface-mount N-channel silicon MOSFET from Toshiba’s U-MOSVIII-H series, designed for automotive applications. It features a DPAK+ (TO-252) package with a maximum drain-source voltage of 100V and a continuous drain current of 7A at 25°C. The device exhibits a maximum on-resistance of 48mΩ at Vgs=10V and a gate charge of 33nC at 10V. It supports an operating junction temperature up to 175°C and holds AEC-Q101 qualification.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High thermal performance enabled by DPAK+ package design
- Low gate charge characteristics for efficient switching operations
Single FETs, MOSFETs Applications
- Switching voltage regulators
- Motor control circuits
- Automotive power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LXHQ against official Toshiba documentation to confirm lead-free status and RoHS compliance. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Confirm that the component meets the specific automotive grade requirements for your target application environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 100V N-channel MOSFET with 7A continuous current capability is required in a DPAK+ package. It is suitable for designs needing AEC-Q101 certification and high junction temperature operation up to 175°C. Compare its 48mΩ on-resistance and 33nC gate charge against alternative devices to ensure compatibility with your switching frequency and efficiency targets.
Single FETs, MOSFETs Part Context
This part belongs to Toshiba’s U-MOSVIII-H family of superjunction MOSFETs. These devices are engineered for high-speed switching and low conduction losses. The TK7S10N1Z,LXHQ specifically targets automotive markets, offering robust performance in compact surface-mount packages while maintaining strict quality standards for vehicle electronics.
Single FETs, MOSFETs Replacement Considerations
Consult Toshiba datasheets for direct cross-references within the TK series. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) when substituting with other manufacturers' 100V 7A DPAK MOSFETs.
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