TK8A25DA,S4X

Single FETs, MOSFETs Overview

The TK8A25DA,S4X is a single N-channel MOSFET from Toshiba's π-MOS VII generation, designed for switching voltage regulator applications. It features a drain-source voltage (V_DSS) of 250 V and a continuous drain current (I_D) of 13 A. The device utilizes a TO-220SIS package with a power dissipation rating of 65 W. Key electrical characteristics include a gate threshold voltage range of 2.0 V to 4.0 V and a maximum on-resistance (R_DS(on)) of 0.13 Ω at V_GS = 10 V.

Single FETs, MOSFETs Feature Summary

• Utilizes Toshiba's π-MOS VII technology for optimized performance in switching applications.
• Provides high-voltage capability suitable for robust power management circuits.
• Features a through-hole mounting package designed for effective thermal dissipation.

Single FETs, MOSFETs Applications

• Switching voltage regulators
• Power supply circuits requiring high-voltage N-channel switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix S4X against official Toshiba documentation to confirm exact tape-and-reel specifications or marking variations. Ensure the component meets RoHS compliance requirements if mandated by your design standards. Cross-reference the absolute maximum ratings with your system's operational limits to prevent overstress conditions during procurement validation.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V N-channel MOSFET with moderate current handling is required for through-hole assembly. Compare the R_DS(on) value against alternative packages to ensure thermal management aligns with your heat sink capabilities. Consider the gate threshold voltage range to ensure compatibility with your driver logic levels for efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's discrete semiconductor portfolio, specifically within the MOSFET category. It is engineered for general-purpose power switching tasks where reliability and low conduction losses are critical. The π-MOS VII generation indicates an advanced process node aimed at improving figure-of-merit metrics compared to older technologies.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic replacements must match the 250 V rating, 13 A current capacity, and TO-220SIS package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB footprint.