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TM3B0039120A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Coherent Corp. Its product description is SIC MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TM3B0039120A
- Description：SIC MOSFET
- Series：-
- Mfr：Coherent Corp
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：60A
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for TM3B0039120A
Single FETs, MOSFETs Overview
The TM3B0039120A is an N-channel Silicon Carbide (SiC) MOSFET manufactured by Coherent Corp. It features a drain-source breakdown voltage of 1200 V and a continuous drain current of 60 A. The device is housed in a TO-247-4 through-hole package and supports operating temperatures up to +200°C. Key electrical parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of 2.8 V, and a total gate charge of 172 nC. It is designed for high-efficiency power switching applications requiring robust thermal performance.
Single FETs, MOSFETs Feature Summary
- Utilizes Silicon Carbide technology for enhanced thermal stability and efficiency
- Rated for continuous operation at junction temperatures up to 200°C
- Designed for high-voltage power switching with low on-resistance characteristics
Single FETs, MOSFETs Applications
- High-efficiency DC-DC converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
Single FETs, MOSFETs Procurement Notes
Verify the specific part number suffix against official Coherent documentation to ensure correct pinout and electrical ratings. Confirm that the TO-247-4 package variant matches your PCB footprint requirements. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards and RoHS directives before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a 1200V rating and 60A continuous current capacity are required in a TO-247-4 package. Consider the 200°C maximum operating temperature for high-thermal environments. Ensure the driver circuit can handle the 172 nC gate charge and ±20V gate voltage limits. Compare on-resistance values if lower conduction losses are critical for the specific application design.
Single FETs, MOSFETs Part Context
This SiC MOSFET belongs to Coherent's discrete power semiconductor portfolio, distinct from their optical networking products. It serves as a key component in modern power electronics, replacing traditional silicon devices to improve system efficiency and reduce cooling requirements in high-power density applications.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pin compatibility and electrical parameter equivalence before replacing existing designs.
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