TN5335N8-G

$0.97

Description：MOSFET N-CH 350V 230MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:80f77f25a6aa Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

TN5335N8-G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 350V 230MA TO243AA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TN5335N8-G

Description：MOSFET N-CH 350V 230MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
Rds On (Max) @ Id, Vgs：15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：110 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-243AA (SOT-89)
Package / Case：TO-243AA

Single FETs, MOSFETs datasheet and documents for TN5335N8-G

TN5335N8-G

Single FETs, MOSFETs Overview

The TN5335N8-G is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by Microchip Technology. It utilizes a silicon-gate process and features a 3-lead SOT-89 package. Key electrical specifications include a drain-to-source breakdown voltage of 350 V, a maximum static on-state resistance of 15 Ω, and a gate threshold voltage of 2 V. The device supports a continuous drain current of 230 mA and dissipates up to 1.6 W at 25°C ambient temperature. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Vertical DMOS structure providing high input impedance and positive temperature coefficient
Low threshold voltage design suitable for logic-level interfaces
Free from thermal runaway and thermally induced secondary breakdown

Single FETs, MOSFETs Applications

Logic-Level Interfaces
Solid-State Relays
Battery-Operated Systems
Photovoltaic Drives
Analog Switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'N8' corresponds to the 3-lead SOT-89 package configuration during procurement. Confirm RoHS compliance status as indicated by the '-G' designation. Ensure the ordering quantity matches the standard reel packaging specification of 2000 units per reel. Cross-reference the datasheet revision DS20005955A for accurate pinout details before integration.

Single FETs, MOSFETs Selection Notes

Select this component when high breakdown voltage and low on-resistance are required in a compact surface-mount form factor. The SOT-89 package offers higher power dissipation capabilities compared to smaller alternatives like SOT-23. Consider the 15 Ω on-state resistance and 230 mA continuous current limits for load requirements. Verify that the application operates within the specified -55°C to +150°C temperature range.

Single FETs, MOSFETs Part Context

The TN5335 series comprises N-Channel and P-Channel Enhancement-Mode Vertical DMOS FETs. The TN5335N8-G specifically denotes the N-Channel variant housed in a 3-lead SOT-89 package. This family is designed for switching and amplifying applications requiring fast switching speeds and low input capacitance. The device combines bipolar-like power handling with MOSFET characteristics.

Single FETs, MOSFETs Replacement Considerations

The TN5335K1-G serves as a direct functional substitute within the same series, differing only in package type (SOT-23 instead of SOT-89). Designers must account for differences in thermal resistance and physical footprint when substituting between these package variants.