TO220FMDD7N65F

$1.63

Description：MOSFET TO-220F N 650V 7A
Series：TO-220F
Mfr：NextGen Components
Package：Tube

SKU:c7b2972622d8 Category: Single FETs, MOSFETs Brand: NextGen Components

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Product introduction

TO220FMDD7N65F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NextGen Components. Its product description is MOSFET TO-220F N 650V 7A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TO220FMDD7N65F

Description：MOSFET TO-220F N 650V 7A
Series：TO-220F
Mfr：NextGen Components
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：20.7 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for TO220FMDD7N65F

TO220FMDD7N65F

Single FETs, MOSFETs Overview

The TO220FMDD7N65F is an N-channel enhancement mode MOSFET from NextGen Components, housed in a TO-220F package. It features a drain-source voltage of 650V and a continuous drain current of 7.0A at 25°C case temperature. The device exhibits a maximum on-resistance of 1.4Ω at VGS=10V and a typical gate charge of 20.7nC. Thermal resistance from junction to case is 3.2°C/W, with a maximum junction temperature of +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-low gate charge for reduced driving requirements
Low reverse transfer capacitance enabling fast switching capability
Improved dv/dt capability and high ruggedness
Validated avalanche energy testing

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
Electronic lamp ballasts based on half bridge
LED power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official specification sheet Q0721-TO220FMDD7N65F to ensure compliance with required parametric tolerances. Confirm that the package configuration matches the tape/reel or tube format specified in the documentation. Ensure the component meets RoHS/RoHS III compliance standards as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 650V breakdown voltage and moderate current handling up to 7A. The TO-220F package provides adequate thermal dissipation for applications where junction-to-case thermal resistance is critical. Consider the low gate charge and fast switching characteristics when optimizing for high-frequency operation in power conversion circuits.

Single FETs, MOSFETs Part Context

This part belongs to the SMD Plastic-Encapsulate MOSFETs TO-220F series manufactured by NextGen Components. It utilizes the MDD supplier code structure, indicating a specific internal designation within the manufacturer's portfolio. The device is designed as a general-purpose power switch suitable for various industrial and consumer electronics power management applications.

Single FETs, MOSFETs Replacement Considerations

The original part number listed in the documentation is MDD7N65F. Verify electrical compatibility, specifically RDS(on) and V(BR)DSS, if substituting with other 650V N-channel MOSFETs in the TO-220F package.