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TP65H300G4LSGB-TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Transphorm. Its product description is GANFET N-CH 650V 6.5A QFN8X8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TP65H300G4LSGB-TR
- Description：GANFET N-CH 650V 6.5A QFN8X8
- Series：SuperGaN®
- Mfr：Transphorm
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V
- Rds On (Max) @ Id, Vgs：312mOhm @ 6.5A, 6V
- Vgs(th) (Max) @ Id：2.8V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：21W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PQFN (8x8)
- Package / Case：8-VDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for TP65H300G4LSGB-TR
Single FETs, MOSFETs Overview
The TP65H300G4LSGB-TR is a single N-channel GaN FET from Renesas Electronics, rated at 650V Vds. It features an Rds(on) of 312 mΩ and Id of 8A. The device uses PQFN-8 packaging, operates between -55°C and +150°C, and has Qg of 12.7 nC.
Single FETs, MOSFETs Feature Summary
- Utilizes Renesas Gen IV SuperGaN technology combining high-voltage GaN HEMT and low-voltage silicon MOSFETs for enhanced reliability.
- Features industry-standard PQFN-8 package with common source configuration for easy integration with existing gate drivers.
Single FETs, MOSFETs Applications
- Consumer power adapters
- Low power SMPS
- Lighting systems
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully. While the model prefix suggests Transphorm, official documentation identifies this specific part as manufactured by Renesas Electronics under the SuperGaN brand. Confirm the datasheet matches the exact suffix LSGBE-TR to ensure correct electrical parameters and packaging specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 650V rating with moderate current handling in compact form factors. The 312 mΩ on-resistance suits applications prioritizing cost-efficiency over ultra-low conduction losses. Ensure thermal management supports the specified power dissipation within the PQFN-8 footprint.
Single FETs, MOSFETs Part Context
This device belongs to the Gen IV SuperGaN series, representing Renesas Electronics' fourth-generation platform. It integrates advanced GaN HEMT technology with silicon MOSFET capabilities to deliver superior performance metrics compared to traditional silicon switches in similar voltage classes.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative devices based on matching Vds, Rds(on), and package dimensions.
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