TPC8212-H(TE12LQ,M

Overview

The TPC8212-H is a silicon N-channel MOS field-effect transistor utilizing Ultra-High-Speed U-MOSIII technology. It features a drain-source voltage of 30 V and a continuous drain current of 6 A. The device exhibits a typical drain-source ON-resistance of 16 mΩ at VGS = 10 V and ID = 3 A, with a forward transfer admittance of 14 S. Gate charge is typically 5.5 nC. Thermal resistance from channel to ambient is 83.3 °C/W for single-device operation on glass-epoxy board (a).

Feature Summary

• Ultra-High-Speed U-MOSIII technology enables high-speed switching performance.
• Small footprint achieved through a compact and thin package design.
• Low gate charge supports efficient power conversion in DC/DC applications.

Applications

• High-efficiency DC/DC converter circuits
• Notebook PC power management systems
• Portable equipment power regulation

Procurement Notes

Verify the specific ordering suffix TE12LQ against official Toshiba documentation to confirm tape-and-reel packaging specifications. Ensure compliance with RoHS directives by checking the most recent product specifications or contacting the manufacturer directly, as environmental data may vary by production batch.

Selection Notes

Select this component for designs requiring low ON-resistance and fast switching speeds within a 30 V limit. Consider the thermal resistance values when designing heat dissipation strategies, particularly for dual-operation configurations where power is evenly distributed between devices.

Part Context

This part belongs to Toshiba's U-MOSIII family of ultra-high-speed MOSFETs. It is designed specifically for portable electronics and notebook PCs where space constraints and switching efficiency are critical. The device integrates advanced trench gate technology to minimize conduction losses while maintaining robust avalanche capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's cross-reference tools or distributor databases for parametrically similar alternatives if direct replacement is required.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is 30 V when measured at ID = 10 mA and VGS = 0 V.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (Vth) ranges from 1.1 V to 2.3 V at Ta = 25°C. Graphical data indicates that Vth decreases as ambient temperature increases.

What is the typical total gate charge?

The typical total gate charge (Qg) is 16 nC under conditions of VDD = -24 V, VGS = 10 V, and ID = 6 A.