TPC8405(TE12L,Q,M)

Overview

The TPC8405(TE12L,Q,M) is a P-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes U-MOS structure technology for low on-resistance and fast switching characteristics. The device features a drain-source breakdown voltage of 40 V and a continuous drain current of 4.7 A. It operates with a maximum gate-source voltage of ±20 V and has a typical drain-source on-resistance of 26 mΩ at VGS = -10 V. The component is housed in a PS-8 surface-mount package, suitable for compact designs.

Feature Summary

• U-MOS structure technology provides low on-resistance and high-speed switching performance.
• Capable of handling repetitive avalanche energy for improved circuit ruggedness.
• Designed for low-voltage drive applications to reduce control power consumption.

Applications

• Motor drivers
• Switching power supplies
• AC adapters

Procurement Notes

Verify the specific ordering suffixes (TE12L, Q, M) against official Toshiba documentation to confirm packaging format, tape width, and reel specifications. Ensure the requested variant matches the exact physical dimensions and marking requirements of the target assembly.

Selection Notes

Select this component for circuits requiring a 40 V P-channel switch with moderate current capacity. Verify that the thermal management design accommodates the power dissipation limits within the PS-8 package. Confirm compatibility with the system's logic-level gate drive voltages.

Part Context

This part belongs to the TPC series of low-voltage MOSFETs from Toshiba. The TPC series encompasses various packages including VS-6, VS-8, and PS-8 types. These devices are generally targeted at portable electronics and battery protection circuits due to their small footprint and efficiency.

Replacement Considerations

Consult Toshiba’s official cross-reference guides for direct replacements. Verify pinout compatibility and electrical parameters such as RDS(on) and VDSS when considering alternative manufacturers' parts.