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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A/7.4A 8SOP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 7.4A
- Rds On (Max) @ Id, Vgs：17mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 10V
- Power - Max：450mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The TPC8407,LQ(S is a Toshiba Power MOSFET transistor housed in the PS-8 surface-mount package. It features an N-channel and P-channel dual configuration utilizing U-MOSIV technology. The device supports a drain-source breakdown voltage of 40 V and continuous drain currents of 5 A for the N-channel and 4 A for the P-channel. On-resistance values are specified at 62.8 mOhms and 82.2 mOhms respectively, with a maximum power dissipation of 1.77 W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Dual complementary channel integration within a compact PS-8 package
- U-MOSIV trench structure for low on-resistance and high switching speed
- Enhanced ruggedness with guaranteed avalanche capability
Applications
- Motor driver power circuits
- Switching power supply synchronous rectification
- Lithium-ion secondary battery protection circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm pinout compatibility and RoHS status. Confirm that the PS-8 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring complementary N-P channel switching in space-constrained designs. Ensure the thermal management solution accommodates the 1.77 W power dissipation limit at the expected ambient temperature to maintain operation within the 175°C junction temperature rating.
Part Context
This part belongs to the Toshiba TPC series of multi-pin MOSFETs. The PS-8 package designation indicates a specific small surface-mount form factor designed for high-density mounting. The U-MOSIV technology represents a specific generation of trench gate structures optimized for low-voltage, high-speed performance.
Replacement Considerations
Cross-reference with other Toshiba PS-8 dual MOSFETs such as the TPCP8407 or TPCF8402 if pinout variations exist. Verify electrical parameters against alternative manufacturers' dual MOSFETs in the PS-8 package.
