TPCA8055-H,LQ(M

Single FETs, MOSFETs Overview

The TPCA8055-H,LQ(M is a silicon N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOSVI-H trench structure to achieve low on-resistance and high-speed switching capabilities. The device is housed in an SOP Advance package, providing a compact footprint suitable for surface-mount applications. Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current rating of 24A at 25°C ambient temperature.

Single FETs, MOSFETs Feature Summary

• U-MOSVI-H trench structure enables low on-resistance and fast switching speeds
• SOP Advance package offers a small footprint with thermal enhancement
• Designed for synchronous rectification and DC-DC converter applications

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Motor driver circuits
• Switching regulator applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with the latest Toshiba product guide to confirm availability and any potential obsolescence notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low conduction loss and rapid switching performance in a compact surface-mount form factor. The U-MOSVI-H technology supports efficient operation in power supply circuits where space constraints are critical. Evaluate thermal management requirements based on the SOP Advance package's heat dissipation capabilities relative to the expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to Toshiba's TPC series of power MOSFETs, specifically utilizing the SOP Advance package variant. The TPC series is engineered for general-purpose power switching applications, offering improved integration and reduced size compared to traditional packages. The U-MOSVI-H process technology represents an advancement in channel density and on-resistance optimization for low-voltage applications.

Single FETs, MOSFETs Replacement Considerations

Consult the Toshiba MOSFET selection guide for direct substitutes within the TPC or SSM series that match the 55V/24A specification and SOP Advance package dimensions. Verify pin compatibility and electrical parameters such as RDS(ON) and gate charge when evaluating alternative components.