TPCP8701(TE85L,F,M

TPCP8701(TE85L,F,M

  • Description:TRANS 2NPN DUAL 80V 3A PS-8
  • Series:-

SKU:3626ee67a880 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 80V 3A PS-8
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):3A
  • Voltage - Collector Emitter Breakdown (Max):80V
  • Vce Saturation (Max) @ Ib, Ic:140mV @ 20mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 300mA, 2V
  • Power - Max:1.77W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:PS-8
  • Grade:-
  • Qualification:-

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TPCP8701(TE85L,F,M

Overview

The Toshiba TPCP8701 is a dual NPN epitaxial planar silicon transistor housed in an 8-pin PS-8 package. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current rating of 3.0 A. The device provides a high DC current gain (hFE) ranging from 400 to 1000 at IC = 0.3 A, with a maximum collector-emitter saturation voltage (VCE(sat)) of 0.14 V at IC = 1 A. Electrical characteristics include a collector cut-off current (ICBO) of 100 nA max and a typical fall time (tf) of 120 ns. Thermal ratings specify a junction temperature (Tj) of 150°C and a DC power dissipation of 0.54 W per device under dual operation conditions.

Feature Summary

  • Dual NPN configuration within a compact PS-8 package for space-constrained designs
  • High DC current gain capability supporting efficient base drive requirements
  • Low collector-emitter saturation voltage for reduced conduction losses
  • Fast switching performance suitable for high-frequency applications

Applications

  • Portable equipment power management circuits
  • General-purpose switching applications
  • Inverter lighting driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the component source matches the authorized distributor channels to guarantee authenticity. Confirm that the marking on the physical device aligns with the datasheet pinout and lot code format before integration into production assemblies.

Selection Notes

Select this component when a dual NPN configuration is required with high current handling capabilities up to 3 A. The low saturation voltage makes it suitable for efficiency-critical power stages. Verify that the operating junction temperature remains below 150°C and that the PCB copper area meets the 645 mm² thermal dissipation requirement specified in the datasheet for accurate power rating calculations.

Part Context

This part belongs to Toshiba's lineup of small-signal and medium-power bipolar transistors designed for portable and industrial electronics. The PS-8 package offers a balance between thermal performance and footprint size compared to larger through-hole alternatives. It serves as a discrete solution for driving loads where integrated drivers may lack the necessary current capacity or flexibility.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must consult the manufacturer's official replacement guide or cross-reference tools to identify compatible components with matching electrical parameters and pin configurations.

TPCP8701(TE85L,F,MTPCP8701(TE85L,F,M

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