TPH3206LDG-TR

Single FETs, MOSFETs Overview

The Transphorm TPH3206LDG-TR is a 600V cascode Gallium Nitride (GaN) FET housed in an 8x8mm PQFN package with a drain tab. It features a maximum on-resistance of 180mΩ and a typical reverse recovery charge of 54nC. The device operates with a gate threshold voltage between 1.65V and 2.6V, supporting continuous drain currents up to 17A at 25°C case temperature. Junction temperatures range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Cascode structure providing normally-off operation compatible with standard silicon gate drivers
• Low reverse recovery charge eliminates the need for external free-wheeling diodes
• JEDEC-qualified GaN technology ensuring reliability under harsh conditions
• RoHS compliant and halogen-free construction

Single FETs, MOSFETs Applications

• Renewable energy systems
• Industrial power supplies
• Automotive electronics
• Telecom and datacom infrastructure
• Servo motor drives

Single FETs, MOSFETs Procurement Notes

Verify that the specific order includes the '-TR' suffix to confirm tape and reel packaging configuration. Ensure compatibility with standard gate drivers due to the cascode architecture. Confirm JEDEC qualification status if operating in high-reliability environments. Check application notes AN0009 and AN0003 for recommended external circuitry and PCB layout guidelines to optimize performance.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring fast switching speeds and low conduction losses in 600V applications. The cascode design simplifies integration by allowing use of conventional drive circuits. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate system-level efficiency gains against potential electromagnetic interference challenges associated with rapid switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the TPH3206LDG series of wide bandgap transistors manufactured by Transphorm Inc. It utilizes gallium nitride on silicon technology to outperform traditional silicon superjunction devices in terms of switching speed and efficiency. The datasheet indicates it is not recommended for new designs, suggesting the existence of updated alternatives within the manufacturer's portfolio.

Single FETs, MOSFETs Replacement Considerations

The datasheet explicitly recommends the TPH3206LDGB as a replacement or alternative for new designs. Verify pinout compatibility and electrical specifications before substituting components in existing layouts.