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TPH3206PSB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Transphorm. Its product description is GANFET N-CH 650V 16A TO220AB. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TPH3206PSB
- Description：GANFET N-CH 650V 16A TO220AB
- Series：-
- Mfr：Transphorm
- Package：Tube
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id：2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4.5 V
- Vgs (Max)：±18V
- Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 480 V
- FET Feature：-
- Power Dissipation (Max)：81W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for TPH3206PSB
Single FETs, MOSFETs Overview
The TPH3206PSB is a normally-off Gallium Nitride (GaN) FET rated at 650V with a maximum dynamic on-resistance of 180mΩ. It utilizes a cascode structure combining GaN HEMT and silicon MOSFET technologies in a TO-220 package with a source tab. Key electrical parameters include a typical gate charge of 6.2nC, transient drain-source voltage of 800V, and junction temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Cascode device structure integrating high-voltage GaN HEMT with low-voltage silicon MOSFET for enhanced reliability.
- Robust design featuring wide gate safety margins and defined intrinsic lifetime tests.
- Very low reverse recovery charge enabling reduced crossover loss.
- JEDEC qualified GaN technology with production-tested dynamic RDS(on).
Single FETs, MOSFETs Applications
- Datacom power supplies
- Broad industrial systems
- Photovoltaic inverters
- Servo motor drives
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Transphorm documentation to confirm package configuration and qualification status. Ensure compatibility with recommended external circuitry guidelines provided in application notes AN0009 and AN0003 for proper PCB layout and probing techniques.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high efficiency in hard- and soft-switched circuits. The GSD pin layout facilitates high-speed design implementation. Consider thermal resistance values when designing heatsinking solutions for continuous operation at elevated temperatures.
Single FETs, MOSFETs Part Context
This part belongs to the Transphorm 650V GaN FET series designed for AC-DC bridgeless totem-pole PFC applications. It aims to increase power density and reduce system size compared to traditional silicon-based solutions.
Single FETs, MOSFETs Replacement Considerations
TPH3208PS
Single FETs, MOSFETs FAQ
What is the cascode structure used in this device?
The TPH3206PSB combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies.
How does the GSD pin layout benefit the design?
The GSD pin layout improves high-speed design implementation by minimizing circuit inductance.
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