TPH3207WS

Description：GANFET N-CH 650V 50A TO247-3
Series：-
Mfr：Transphorm
Package：Tube

SKU:142c3be7b466 Category: Single FETs, MOSFETs Brand: Transphorm

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Product introduction

TPH3207WS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Transphorm. Its product description is GANFET N-CH 650V 50A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPH3207WS

Description：GANFET N-CH 650V 50A TO247-3
Series：-
Mfr：Transphorm
Package：Tube
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id：2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 8 V
Vgs (Max)：±18V
Input Capacitance (Ciss) (Max) @ Vds：2197 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：178W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for TPH3207WS

TPH3207WS

Single FETs, MOSFETs Overview

The Transphorm TPH3207WS is a normally-off 650V Gallium Nitride (GaN) FET housed in a TO-247 package. It features a cascode structure combining GaN HEMT and silicon MOSFET technologies. Key electrical parameters include a maximum dynamic on-resistance of 41mΩ, a typical gate charge of 28nC, and a typical reverse recovery charge of 175nC. The device supports a continuous drain current of 50A at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

JEDEC qualified GaN technology with defined intrinsic lifetime tests
Robust design featuring wide gate safety margin and transient over-voltage capability
Very low reverse recovery charge reducing crossover loss
GSD pin layout optimized for high-speed design

Single FETs, MOSFETs Applications

Datacom power supplies
Broad industrial applications
PV inverters
Servo motor drives

Single FETs, MOSFETs Procurement Notes

Verify the Not Recommended for New Designs (NRND) status before procurement. Confirm availability of the recommended replacement part number TP65H035WS or TP65H050WS for new projects. Ensure sourcing from authorized distributors to guarantee component authenticity and adherence to RoHS compliance standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency in hard- and soft-switched circuits. It enables AC-DC bridgeless totem-pole PFC topologies for increased power density. Verify compatibility with standard gate drivers operating between 0V and 8-10V. Consider thermal management requirements given the specified junction-to-case resistance.

Single FETs, MOSFETs Part Context

This device utilizes a cascode configuration integrating state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFETs. This architecture provides superior reliability compared to monolithic GaN devices while maintaining improved efficiency over traditional silicon switches through lower gate charge and reduced crossover losses.