TPM2840-03

RF Diode Overview

The DNmicron TPM2840-03 is a silicon Schottky diode designed for RF applications in the VHF/UHF range. It operates within a temperature range of -55°C to +125°C and features a maximum reverse voltage of 5V and a forward current rating of 130mA. Key electrical characteristics include a breakdown voltage of 7V at 10μA, a typical diode capacitance of 0.48pF at 0V bias and 1MHz, and a differential forward resistance of 9Ω at 5mA. The device is housed in an SOT-23 package.

RF Diode Feature Summary

• High matching degree between diodes when multiple units are mounted in a single surface mount package
• Suitable for mixer applications in VHF/UHF frequency ranges
• Capable of functioning as a DC bias detector diode
• Optimized for high-speed switching operations

RF Diode Applications

• Mixer applications in VHF/UHF range
• DC bias detector diode circuits
• High-speed switching applications

RF Diode Procurement Notes

Verify the specific package type and electrical parameters against the official datasheet before procurement. Ensure compatibility with RoHS compliance requirements. Confirm that the ordering suffix corresponds to the correct package variant, such as SOT-23 for the TPM2840-03 model. Check for tape and reel options if automated assembly is required.

RF Diode Selection Notes

Select the TPM2840-03 for designs requiring low capacitance and fast switching in VHF/UHF bands. Consider the SOT-23 package for space-constrained PCB layouts. Evaluate the thermal performance within the specified operating temperature range. Ensure the circuit design respects the maximum reverse voltage and forward current limits to maintain reliability.

RF Diode Part Context

The TPM2840 series includes variants like the TPM2840-01 and TPM2840-02, which differ primarily in packaging. The TPM2840-01 utilizes an SOD-523 package, while the TPM2840-02 and TPM2840-03 both use the SOT-23 package. All series members share similar electrical characteristics but offer different physical form factors for integration flexibility.

RF Diode Replacement Considerations

Direct substitutes should be silicon Schottky diodes with comparable reverse voltage, forward current, and capacitance ratings. Verify package compatibility, specifically SOT-23 for the TPM2840-03. Ensure the replacement meets the same RF performance criteria for VHF/UHF mixer or switching applications.