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TPWR7904PB,L1XHQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 40V 150A 8DSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TPWR7904PB,L1XHQ
- Description：MOSFET N-CH 40V 150A 8DSOP
- Series：U-MOSIX-H
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：150A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：0.79mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：85 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6650 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：960mW (Ta), 170W (Tc)
- Operating Temperature：175°C
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-DSOP Advance
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for TPWR7904PB,L1XHQ
Single FETs, MOSFETs Overview
The TPWR7904PB,L1XHQ is an N-channel power MOSFET from Toshiba’s U-MOSIX-H series, designed for automotive applications under AEC-Q101 standards. It features a 40V drain-source voltage rating and supports a continuous drain current of 150A at ambient temperature. The device utilizes an 8-DSOP Advance surface-mount package, offering thermal dissipation capabilities of 960mW at ambient and 170W at case temperatures. Key electrical characteristics include a maximum on-resistance of 790µΩ at 10V gate drive and a switching frequency capability up to 1MHz.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified by AEC-Q101 standard
- High-speed switching performance optimized for 1MHz operation
- Low on-resistance technology for enhanced energy efficiency
- Compact surface-mount packaging for high-density board layouts
Single FETs, MOSFETs Applications
- DC-DC converters in automotive systems
- Motor driver circuits
- Power management switches
- High-frequency switching applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix L1XHQ to ensure correct packaging and tape-and-reel specifications. Confirm that the procurement source provides official documentation referencing the AEC-Q101 qualification status. Ensure compatibility with the specified 8-DSOP Advance footprint during component sourcing and verification processes.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust automotive-grade N-channel MOSFETs with low conduction losses. The 40V rating suits low-voltage automotive architectures. Consider the 150A current capacity and thermal performance when designing heat dissipation solutions. Verify that the driving circuit can support the required gate voltage levels for optimal Rds(on) performance.
Single FETs, MOSFETs Part Context
This device belongs to Toshiba’s U-MOSIX-H series, which focuses on low-voltage power MOSFETs for compact, high-efficiency applications. The series is engineered to balance switching speed and conduction loss, making it suitable for modern automotive electronics where space and thermal constraints are critical design factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Toshiba substitution guides for verified equivalents. Ensure any replacement maintains the same voltage, current, and package specifications while adhering to automotive quality standards.
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