TQM076NH04DCR RLG

TQM076NH04DCR RLG

$2.06
  • Description:MOSFET 2N-CH 40V 15A 8PDFNU
  • Series:PerFET™

SKU:c077caf281ea Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 15A 8PDFNU
  • Series:PerFET™
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:15A (Ta), 40A (Tc)
  • Rds On (Max) @ Id, Vgs:7.6mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1850pF @ 25V
  • Power - Max:55.6W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-PDFNU (5x6)
  • Grade:Automotive
  • Qualification:AEC-Q101

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TQM076NH04DCR RLG

Overview

The TQM076NH04DCR RLG is a dual N-channel power MOSFET from Taiwan Semiconductor’s PerFET series, housed in an 8-PDFNU (5x6) surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current of 14A at ambient temperature, rising to 34A at case temperature. The device exhibits a maximum on-resistance of 76 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 19nC at 10V, input capacitance of 1217pF at 25V, and a threshold voltage of 3.6V at 250µA. It supports a junction temperature range of -55°C to 175°C with a maximum power dissipation of 55.6W at the case.

Feature Summary

  • Dual N-Channel Configuration: Integrates two independent channels within a single compact package for space-efficient circuit designs.
  • Automotive Grade Reliability: Certified under AEC-Q101 standards to ensure performance stability in demanding automotive environments.
  • Enhanced Thermal Management: Utilizes a PowerTDFN package design to facilitate efficient heat dissipation and robust thermal performance.

Applications

  • Automotive power distribution systems requiring high reliability
  • Low-voltage DC-DC converter circuits
  • Motor control applications involving small motors

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official datasheets. Confirm that the specific suffix matches the required packaging format. Ensure compliance with RoHS directives and AEC-Q101 automotive qualification requirements before integration into production schedules.

Selection Notes

Select this component when a dual N-channel topology is required within a limited footprint. The 40V rating suits low-voltage automotive and industrial applications. Evaluate the 76mΩ on-resistance against thermal constraints to ensure adequate heat sinking or PCB copper area allocation for the intended load current.

Part Context

This device belongs to the TQM series of power MOSFETs manufactured by Taiwan Semiconductor Corporation. It is part of the PerFET product line, which focuses on optimizing on-resistance and switching speed for modern power management solutions. The dual configuration distinguishes it from single-channel variants in the same voltage class.

Replacement Considerations

Direct substitutes must match the 40V/14A dual N-channel specification and 8-PDFNU package. Verify pin compatibility and electrical parameters such as Rds(on) and Qg. Consult manufacturer cross-reference lists for confirmed equivalent parts with identical thermal and electrical characteristics.

TQM076NH04DCR RLGTQM076NH04DCR RLG
$2.06
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