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The TQM076NH04DCR RLG is a dual N-channel power MOSFET from Taiwan Semiconductor’s PerFET series, housed in an 8-PDFNU (5x6) surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current of 14A at ambient temperature, rising to 34A at case temperature. The device exhibits a maximum on-resistance of 76 milliohms at 10V gate drive. Key electrical parameters include a gate charge of 19nC at 10V, input capacitance of 1217pF at 25V, and a threshold voltage of 3.6V at 250µA. It supports a junction temperature range of -55°C to 175°C with a maximum power dissipation of 55.6W at the case.
Verify component authenticity by cross-referencing the manufacturer part number with official datasheets. Confirm that the specific suffix matches the required packaging format. Ensure compliance with RoHS directives and AEC-Q101 automotive qualification requirements before integration into production schedules.
Select this component when a dual N-channel topology is required within a limited footprint. The 40V rating suits low-voltage automotive and industrial applications. Evaluate the 76mΩ on-resistance against thermal constraints to ensure adequate heat sinking or PCB copper area allocation for the intended load current.
This device belongs to the TQM series of power MOSFETs manufactured by Taiwan Semiconductor Corporation. It is part of the PerFET product line, which focuses on optimizing on-resistance and switching speed for modern power management solutions. The dual configuration distinguishes it from single-channel variants in the same voltage class.
Direct substitutes must match the 40V/14A dual N-channel specification and 8-PDFNU package. Verify pin compatibility and electrical parameters such as Rds(on) and Qg. Consult manufacturer cross-reference lists for confirmed equivalent parts with identical thermal and electrical characteristics.