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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9A 8PDFNU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 39A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1135pF @ 20V
- Power - Max：2.4W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TQM150NB04DCR RLG is an automotive-grade dual N-channel MOSFET from Taiwan Semiconductor, qualified to AEC-Q101 Rev-D standards. It features a 40V drain-source voltage and supports a continuous drain current of 39A at 25°C case temperature. The device operates up to a junction temperature of 175°C with a maximum on-resistance of 15mΩ at VGS=10V. Packaged in a PDFN56U Dual footprint, it includes integrated body diodes with a reverse recovery time of 14ns.
Feature Summary
- Automotive reliability certified under AEC-Q101 Rev-D specifications
- High thermal performance enabling operation at 175°C junction temperatures
- Comprehensive testing including 100% UIS and gate resistance verification
Applications
- Power switching for 12V automotive systems
- Solenoid and motor control circuits
- Automotive transmission control modules
- DC-DC converter implementations
Procurement Notes
Verify the specific revision code A1912 against the latest official datasheet before finalizing component selection. Confirm that the PDFN56U Dual package dimensions align with the target PCB layout requirements. Ensure compliance with RoHS directives and IEC 61249-2-21 halogen-free standards as specified by the manufacturer.
Selection Notes
Select this component when designing for high-current automotive applications requiring robust avalanche energy handling. The low gate charge of 18nC facilitates efficient driver interface design. Evaluate the thermal resistance parameters relative to the copper pad area to ensure adequate heat dissipation for the intended duty cycle.
Part Context
This part belongs to the TQM series of automotive dual N-channel MOSFETs manufactured by Taiwan Semiconductor Corporation. The series is engineered specifically for demanding automotive environments, offering enhanced ruggedness compared to standard industrial counterparts through rigorous qualification protocols.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel configuration, and PDFN56U package. Verify that alternative components meet AEC-Q101 requirements if automotive qualification is mandatory for the application.
FAQ
What is the maximum single pulse avalanche energy?
The maximum single pulse avalanche energy (EAS) is rated at 34 mJ under test conditions of L = 0.3mH, VGS = 10V, VDD = 25V, RG = 50Ω, and IAS = 15A.
How does the on-resistance vary with temperature?
At TJ = 125°C, the maximum RDS(on) increases to 25.5mΩ, and at TJ = 175°C, it reaches 31.5mΩ, both measured at VGS = 10V and ID = 9A.
Is the device suitable for high-frequency switching?
Yes, the device exhibits fast switching characteristics with a turn-on delay of 7ns, rise time of 8ns, turn-off delay of 13ns, and fall time of 4ns.
