TQM230NH08DCR RLG

Overview

The TQM230NH08DCR RLG is a dual N-channel MOSFET manufactured by Taiwan Semiconductor Corporation. It features a 60V drain-source voltage (Vdss) and operates in an 8-PDFNU(5x6) PowerTDFN package with wettable flanks. The device supports a continuous drain current of 6A at ambient temperature and 25A at case temperature. Key electrical parameters include a maximum on-resistance of 30mΩ at 6A and 10V, a gate charge of 20nC at 10V, and an input capacitance of 1020pF at 30V. It is qualified to AEC-Q101 standards for automotive applications.

Feature Summary

• Dual N-Channel Configuration
• Automotive Grade Qualification
• Wettable Flank Package Design

Applications

• Automotive power management circuits
• Low-side switching applications
• General purpose power control

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 reliability standards for your target application environment before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount footprint. Ensure the design accommodates the specified thermal dissipation limits of 48W at the case level. Verify that the gate drive voltage aligns with the 10V test conditions for optimal on-resistance performance.

Part Context

This part belongs to the TQM series from Taiwan Semiconductor Corporation, which focuses on automotive-grade MOSFETs rated for 40V or 60V. The series utilizes advanced process technologies to achieve low on-resistance and high efficiency in compact packages suitable for modern electronic systems.

Replacement Considerations

Consult the manufacturer's official documentation for confirmed substitute part numbers. Cross-reference pinouts and electrical characteristics carefully if considering alternatives from other manufacturers.