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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 12A 8PDFNU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 51A (Tc)
- Rds On (Max) @ Id, Vgs：8.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1091pF @ 15V
- Power - Max：2W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM085NB03DCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package and operates with a drain-source voltage of 30V. The device supports a continuous drain current of 12A at 25°C ambient temperature and 51A at 25°C case temperature. Maximum on-state resistance is specified as 8.5mΩ at VGS=10V and 15mΩ at VGS=4.5V. Total gate charge reaches 20nC at VGS=10V. The component is rated for an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-Channel configuration within a single compact package
- Logic level gate drive capability for efficient switching
- Low on-resistance design to minimize conductive losses
- Validated for 100% unclamped inductive switching (UIS) performance
Applications
- BLDC Motor Control
- Battery Power Management
- DC-DC Converter
- Secondary Synchronous Rectification
Procurement Notes
Verify the specific ordering code TSM085NB03DCR RLG against official Taiwan Semiconductor documentation to confirm the PDFN56 Dual package and reel quantity specifications. Ensure that application requirements align with the absolute maximum ratings, particularly the 30V drain-source voltage limit and the thermal constraints defined by the junction-to-case resistance. Confirm compliance with RoHS standards and halogen-free requirements per IEC 61249-2-21 before finalizing procurement.
Selection Notes
Select this component for applications requiring low on-state resistance and fast switching speeds within a 30V system. The logic level gate threshold allows compatibility with standard control voltages. Consider the thermal management requirements based on the junction-to-ambient resistance when designing for ambient temperature operation versus case temperature mounting. Verify that the pulsed drain current capabilities meet the peak load demands of the intended circuit topology.
Part Context
This part belongs to the TSM085NB03 series of dual N-channel MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, which provides a small footprint suitable for space-constrained designs. The device is designed to offer improved thermal performance and electrical efficiency compared to discrete single-channel alternatives in similar voltage classes.
Replacement Considerations
Direct substitutes must match the 30V rating, dual N-channel configuration, and PDFN56 Dual package dimensions. Verify that alternative components meet or exceed the 8.5mΩ on-resistance specification at VGS=10V and maintain compatible gate charge characteristics to ensure equivalent switching performance.
