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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1269pF @ 20V
- Power - Max：2W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM110NB04LDCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a PDFN56 Dual package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 10A at ambient temperature and 48A at case temperature, with a maximum on-resistance of 11mΩ at VGS=10V. Total gate charge is 23nC at VGS=10V. It includes an integrated body diode with a reverse recovery time of 15ns. The component is qualified under AEC-Q101 standards and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- Logic level gate drive capability for efficient switching control
- Low on-resistance design to minimize conductive losses
- High avalanche energy rating for robust operation in inductive loads
Applications
- BLDC Motor Control
- Battery Power Management
- DC-DC Converter
- Secondary Synchronous Rectification
Procurement Notes
Verify the specific ordering code TSM110NB04LDCR RLG against official Taiwan Semiconductor documentation to confirm package type and packing quantity. Ensure compliance with RoHS and REACH requirements as stated in the datasheet. Confirm moisture sensitivity level (MSL 1) handling procedures during assembly.
Selection Notes
Select this component for applications requiring low conduction losses and fast switching speeds in a compact surface-mount footprint. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage meets the logic level requirements for optimal performance.
Part Context
This part belongs to the TSM110 series of dual N-channel MOSFETs from Taiwan Semiconductor. It is designed for high-efficiency power management applications where space constraints and thermal performance are critical factors.
Replacement Considerations
Consult official substitution lists or cross-reference tools provided by Taiwan Semiconductor for verified alternatives. Ensure any replacement matches the electrical specifications and package dimensions.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 192A.
Is the device suitable for automotive applications?
Yes, the TSM110NB04LDCR is AEC-Q101 qualified.
What is the typical gate threshold voltage?
The typical gate threshold voltage (VGS(TH)) is 1.6V at ID=250µA.
