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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10A 8PDFN
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1269pF @ 20V
- Power - Max：2W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFN (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM110NB04LDCR is a dual N-channel MOSFET array manufactured by Taiwan Semiconductor Corporation. It features a 40V drain-source voltage rating and supports continuous drain currents of 10A at ambient temperature and 48A at case temperature. The device exhibits a maximum on-resistance of 11 milliohms at 10A with a 10V gate drive. Electrical characteristics include a maximum gate charge of 23nC at 10V and an input capacitance of 1269pF at 20V. The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-PDFN (5x6) surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Low on-resistance for improved power efficiency
- High thermal dissipation capability via exposed pad package
Applications
- Power management integrated circuits
- DC-DC converter output stages
- Motor control applications
Procurement Notes
Verify the manufacturer part number against official Taiwan Semiconductor documentation to ensure authenticity. Confirm that the specific suffix matches the required packaging format, such as tape and reel or cut tape, prior to ordering. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards and material compliance requirements.
Selection Notes
Select this component when a dual N-channel topology is required within a compact footprint. Ensure the application voltage remains below the 40V limit and that the thermal design accommodates the specified power dissipation ratings. Verify that the gate drive voltage meets the 10V requirement to achieve the stated low on-resistance performance levels.
Part Context
This device belongs to the TSM110 series of dual MOSFET arrays from Taiwan Semiconductor. It utilizes an 8-PowerTDFN package designed for surface-mount assembly. The component is classified as a discrete semiconductor product intended for general-purpose switching applications requiring high current density in a small form factor.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel configuration, and 8-PDFN package. Compare on-resistance and thermal resistance values to ensure equivalent performance. Verify pinout compatibility before implementation.
