TSM150NB04LDCR RLG

$0.90

Description：MOSFET 2N-CH 40V 8A 8PDFN
Series：-

SKU:fcc57f0ce0fe Category: FET, MOSFET Arrays Brand: Taiwan Semiconductor Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 8A 8PDFN
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：966pF @ 20V
Power - Max：2W (Ta), 40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PDFN (5x6)
Grade：-
Qualification：-

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TSM150NB04LDCR RLG

Overview

The TSM150NB04LDCR RLG is a dual N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a PDFN56 Dual package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 37A at case temperature of 25°C, with a maximum on-resistance of 15mΩ at VGS=10V and 19mΩ at VGS=4.5V. Total gate charge is 18nC at VGS=10V. Thermal resistance from junction to case is 3.1°C/W. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Logic level gate drive capability for efficient switching control
Low on-state resistance to minimize conductive losses
Low gate charge optimized for fast power switching applications
Validated through 100% unclamped inductive switching and gate resistance testing

Applications

BLDC Motor Control
Battery Power Management
DC-DC Converter
Secondary Synchronous Rectification

Procurement Notes

Verify the component against the official datasheet version A2001 to ensure technical compliance. Confirm that the PDFN56 Dual package matches the required footprint dimensions and pad layout. Check RoHS compliance and halogen-free status according to IEC 61249-2-21 standards before integration into the final assembly process.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact surface-mount form factor. The logic-level threshold allows direct driving from standard logic interfaces. Ensure the thermal design accommodates the specified junction-to-case resistance for the intended power dissipation levels in the target application environment.

Part Context

This part belongs to the TSM150NB04 series of dual N-channel power MOSFETs. It utilizes the PDFN56 Dual package, which provides a low-profile solution suitable for space-constrained designs. The device is designed for general-purpose power switching applications requiring high efficiency and robust performance under varying load conditions.

Replacement Considerations

Direct substitutes must match the 40V rating, dual N-channel topology, and PDFN56 Dual package outline. Verify pinout compatibility and thermal characteristics to ensure seamless integration without redesigning the PCB layout or driver circuitry.