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TSM160N10LCR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 100V, 46A, SINGLE N-CHANNEL POWE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM160N10LCR
- Description：100V, 46A, SINGLE N-CHANNEL POWE
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：16mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：73 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4431 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.6W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (5x6)
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for TSM160N10LCR
Single FETs, MOSFETs Overview
The TSM160N10LCR is an N-channel enhancement mode silicon MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage of 100V and a continuous drain current of 46A at case temperature. The device is housed in an 8-pin PDFN (5x6) surface-mount package, offering a power dissipation rating of 83W. It is qualified under AEC-Q101 standards for automotive reliability and operates with a maximum junction temperature of +150°C.
Single FETs, MOSFETs Feature Summary
- Low gate charge characteristics designed to facilitate fast power switching applications
- Automotive-grade qualification compliant with AEC-Q101 standards for enhanced reliability
- Enhancement mode channel operation optimized for efficient power management
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the RLG suffix when sourcing components. Confirm that the received units match the 8-PDFN (5x6) package dimensions. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during soldering processes.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust 100V blocking capability with high current handling. The AEC-Q101 qualification makes it suitable for automotive environments where thermal stability up to 150°C is critical. Consider the 83W power dissipation limit when designing thermal management solutions for the compact PDFN footprint.
Single FETs, MOSFETs Part Context
This device belongs to the TSM series of power MOSFETs from Taiwan Semiconductor. It utilizes advanced silicon technology to achieve low on-resistance within a compact surface-mount form factor. The series is engineered to meet the stringent demands of modern electronic systems requiring high efficiency and reliability.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Do not assume pin compatibility or electrical parameter parity with generic N-channel MOSFETs without reviewing specific datasheet comparisons.
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