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TSM2318CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET N-CHANNEL 40V 3.9A SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM2318CX RFG
- Description：MOSFET N-CHANNEL 40V 3.9A SOT23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for TSM2318CX RFG
Single FETs, MOSFETs Overview
The TSM2318CX RFG is a single N-channel enhancement mode power MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes silicon technology and is housed in an SOT-23 surface-mount package with three pins. The device supports a maximum drain-source voltage of 40 V and a continuous drain current of 3.9 A. Key electrical parameters include a maximum on-resistance of 62 mΩ, a typical gate charge of 10 nC at 10 V, and a maximum power dissipation of 1.25 W. It operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode configuration for standard switching applications
- Surface-mount SOT-23 package design for compact circuit integration
- Silicon-based construction supporting high-temperature operation
Single FETs, MOSFETs Applications
- Low-side switching circuits
- Power management modules
- General-purpose electronic devices
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'RFG' against official Taiwan Semiconductor documentation to confirm compliance details such as RoHS status and halogen-free classification. Ensure the component matches the exact datasheet revision required for your design specifications before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a 40 V N-channel MOSFET with moderate current handling capabilities is required in a small form factor. Consider the 62 mΩ on-resistance and 10 nC gate charge for efficiency and drive requirements. Confirm that the SOT-23 thermal performance meets the system's power dissipation needs under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the TSM23xx series of power MOSFETs from Taiwan Semiconductor, designed for general-purpose switching applications. The series offers various voltage and current ratings within the same SOT-23 footprint to facilitate design flexibility. The TSM2318CX specifically targets applications requiring 40 V breakdown with efficient conduction characteristics.
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