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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5A 8PDFNU
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 24A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：966pF @ 30V
- Power - Max：2W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-PDFNU (5x6)
- Grade：-
- Qualification：-
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Overview
The TSM300NB06LDCR RLG is a dual N-Channel Power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a PDFN56 Dual package and operates with a Drain-Source Voltage (VDS) of 60 V. The device supports a continuous drain current of 24 A at case temperature (TC = 25°C) and 5 A at ambient temperature (TA = 25°C). Its maximum on-state resistance (RDS(on)) is 30 mΩ at VGS = 10V and 39 mΩ at VGS = 4.5V. Total gate charge (Qg) is 17 nC at VGS = 10V and 9 nC at VGS = 4.5V. The component is rated for an operating junction temperature range of -55 to +150 °C.
Feature Summary
- Dual N-Channel configuration designed for logic level operation
- Low on-state resistance to minimize conductive losses
- Optimized low gate charge for fast power switching applications
- Manufactured with halogen-free materials compliant with IEC standards
Applications
- BLDC Motor Control
- Battery Power Management
- DC-DC Converter
- Secondary Synchronous Rectification
Procurement Notes
Verify the specific ordering code TSM300NB06LDCR RLG against official Taiwan Semiconductor documentation to confirm the PDFN56 Dual package and 2,500 pieces per reel packing format. Ensure that the requested components match the version A2004 datasheet specifications regarding electrical limits and thermal performance before finalizing procurement orders.
Selection Notes
Select this component when a dual N-Channel MOSFET with a 60 V rating and low RDS(on) is required for compact surface-mount designs. Consider the 24 A continuous drain current capability at TC = 25°C and the 30 mΩ maximum resistance at VGS = 10V for efficient power management. Verify that the system's thermal design can accommodate the specified junction-to-case thermal resistance of 3.1 °C/W.
Part Context
This part belongs to the TSM300 series of dual N-Channel Power MOSFETs from Taiwan Semiconductor. It utilizes the PDFN56 Dual package, which provides a compact footprint suitable for high-density PCB layouts. The device is engineered for automotive-grade reliability, featuring 100% UIS and Rg testing as documented in the manufacturer's specifications.
Replacement Considerations
Consult official Taiwan Semiconductor cross-reference lists or distributor databases for verified substitute part numbers. Do not assume functional equivalence based solely on matching voltage or current ratings without verifying pinout compatibility and thermal characteristics.
