TSM300NB06LDCR

TSM300NB06LDCR

$0.77
  • Description:MOSFET 2N-CH 60V 5A 8PDFNU
  • Series:-

SKU:24d256837b0d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 5A 8PDFNU
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs:30mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:966pF @ 30V
  • Power - Max:2W (Ta), 40W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-PDFNU (5x6)
  • Grade:-
  • Qualification:-

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TSM300NB06LDCR

Overview

The TSM300NB06LDCR is a dual N-channel MOSFET manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6A at ambient temperature, rising to 25A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 milliohms at 10V gate drive with 6A current. Key electrical parameters include a maximum gate charge of 20nC at 10V and an input capacitance of 1020pF at 30V. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-PDFNU surface-mount package.

Feature Summary

  • Dual N-channel configuration for space-efficient circuit design
  • Automotive-grade reliability certified under AEC-Q101 standards
  • Surface-mount construction with wettable flanks for enhanced inspection

Applications

  • Automotive power management systems
  • Low-side switching applications
  • DC-DC converter circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required automotive qualification standards for your specific application environment before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel topology is required within a compact footprint. Ensure the thermal management solution supports the specified power dissipation limits at both ambient and case temperatures. Verify that the gate drive voltage aligns with the low on-resistance threshold requirements for optimal efficiency.

Part Context

This part belongs to the TQM series of automotive MOSFETs from Taiwan Semiconductor. The series typically offers 40V or 60V options designed for high-reliability automotive environments. The TSM300NB06LDCR specifically targets applications requiring robust performance in constrained spaces.

Replacement Considerations

Consult the manufacturer's official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and automotive qualification status.

TSM300NB06LDCRTSM300NB06LDCR
$0.77
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