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The TSM300NB06LDCR is a dual N-channel MOSFET manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6A at ambient temperature, rising to 25A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 30 milliohms at 10V gate drive with 6A current. Key electrical parameters include a maximum gate charge of 20nC at 10V and an input capacitance of 1020pF at 30V. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-PDFNU surface-mount package.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required automotive qualification standards for your specific application environment before finalizing procurement orders.
Select this component when a dual N-channel topology is required within a compact footprint. Ensure the thermal management solution supports the specified power dissipation limits at both ambient and case temperatures. Verify that the gate drive voltage aligns with the low on-resistance threshold requirements for optimal efficiency.
This part belongs to the TQM series of automotive MOSFETs from Taiwan Semiconductor. The series typically offers 40V or 60V options designed for high-reliability automotive environments. The TSM300NB06LDCR specifically targets applications requiring robust performance in constrained spaces.
Consult the manufacturer's official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and automotive qualification status.