ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.2A SOT26
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta)
- Rds On (Max) @ Id, Vgs：140mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.23nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：882.51pF @ 6V
- Power - Max：1.15W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
Download product information
Overview
The TSM3911DCX6 is a P-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds. The device is housed in an SOT-323 surface-mount package, designed for compact circuit layouts. Key electrical characteristics include a drain-source voltage rating of -30V and a gate-source voltage limit of ±20V. At a case temperature of 25°C, the continuous drain current is rated at -4.3A. The typical on-resistance is specified at 0.038 ohms when the gate-source voltage is -10V. These parameters define its suitability for low-voltage power management applications requiring efficient switching performance.
Feature Summary
- TrenchFET technology provides optimized specific on-resistance for improved efficiency.
- Surface-mount SOT-323 package enables space-constrained PCB designs.
- Enhanced avalanche energy capability supports robust operation in inductive loads.
Applications
- Power management circuits
- Load switches
- Battery protection modules
Procurement Notes
Verify the component authenticity through authorized distributors or direct manufacturer channels. Confirm the marking code matches the official datasheet specifications. Ensure the packaging type aligns with assembly requirements. Check for RoHS compliance documentation if required by regulatory standards. Validate the part number suffix against current production status to avoid obsolete stock.
Selection Notes
Select this component based on the required voltage and current ratings for the specific application. Consider the thermal resistance and package size constraints during layout design. Evaluate the gate charge parameters for driving requirements in high-frequency switching scenarios. Compare the on-resistance values against alternative packages to balance conduction losses and footprint limitations.
Part Context
This part belongs to the TSM39xx series of P-channel MOSFETs from Taiwan Semiconductor. The series focuses on low-voltage applications with emphasis on efficiency and reliability. The DCX6 suffix indicates the specific tape and reel packaging configuration used for automated surface-mount assembly processes.
Replacement Considerations
Cross-reference with SI3911DV-T1-GE3 for pin-compatible alternatives. Verify that substitute parts meet the same -30V Vds and SOT-323 package requirements. Ensure equivalent Rds(on) and gate charge specifications are maintained for circuit compatibility.
