TSM4936DCS

TSM4936DCS

$0.52
  • Description:MOSFET 2N-CH 30V 5.9A 8SOP
  • Series:-

SKU:a41fd7822c84 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 5.9A 8SOP
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
  • Rds On (Max) @ Id, Vgs:36mOhm @ 5.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:610pF @ 15V
  • Power - Max:3W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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TSM4936DCS

Overview

The TSM4936DCS is a dual N-channel MOSFET array manufactured by Taiwan Semiconductor Corporation. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 5.5A at 25°C. The device operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOP surface-mount package. Key electrical parameters include a maximum gate threshold voltage of 2.1V at 250µA, a typical on-resistance of 17mΩ at 10V, and a maximum gate charge of 18nC at 10V. The input capacitance is specified as 680pF at 24V, with a total power dissipation rating of 2.4W.

Feature Summary

  • Dual N-Channel Configuration
  • Low On-Resistance
  • Surface Mount Packaging

Applications

  • Power Management Circuits
  • Load Switching Applications
  • DC-DC Converter Output Stages

Procurement Notes

Verify the exact part number against official manufacturer documentation to ensure compatibility with design specifications. Confirm that the component meets required environmental standards such as RoHS compliance before procurement. Cross-reference datasheet parameters with system requirements to validate performance under operating conditions.

Selection Notes

Select this component based on its 30V voltage rating and 5.5A current capacity for low-voltage power applications. Ensure the thermal management design accommodates the 2.4W power dissipation limit. Verify that the 8-SOP package dimensions fit the printed circuit board layout constraints.

Part Context

This component belongs to the TSM4936 series of dual N-channel MOSFET arrays from Taiwan Semiconductor Corporation. It is designed for general-purpose switching applications requiring compact packaging and efficient power handling capabilities in electronic circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer documentation or authorized distributors for verified alternative components.

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