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TSM60NB900CH is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is 600V, 4A, SINGLE N-CHANNEL POWER. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for TSM60NB900CH
- Description：600V, 4A, SINGLE N-CHANNEL POWER
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：36.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251 (IPAK)
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for TSM60NB900CH
Single FETs, MOSFETs Overview
The TSM60NB900CH is a single N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a breakdown voltage of 600V and a continuous drain current of 4A at case temperature. The device is housed in a TO-251 (IPAK) through-hole package. Key electrical parameters include a gate charge of 9.6 nC, power dissipation of 36.8W at case temperature, and an operating temperature range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed for high-voltage switching applications up to 600V
- Single N-channel configuration for efficient power control
- Robust thermal performance with 36.8W power dissipation capability
Single FETs, MOSFETs Applications
- Power supply circuits
- Motor control systems
- High-voltage switching modules
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffix C5G when sourcing. Confirm the manufacturer is Taiwan Semiconductor Corporation. Ensure the package type matches TO-251 (IPAK). Check datasheet revisions for any parameter updates before integration into designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 600V blocking capability and 4A continuous current handling. The TO-251 package suits through-hole mounting requirements. Consider thermal management needs given the 36.8W dissipation rating. Verify gate charge specifications against drive circuit capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the TSM60NB900 series of N-channel power MOSFETs from Taiwan Semiconductor. It shares similar electrical characteristics with variants like TSM60NB900CP but differs in packaging. The CH designation typically indicates specific tape and reel or bulk packaging options within the product line.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 600V 4A N-channel MOSFETs in TO-251 packages. Verify pinout compatibility and thermal resistance values. Cross-reference with TSM60NB900CP if package differences are acceptable.
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