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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 8TSSOP
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：565pF @ 8V
- Power - Max：1.6W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The TSM6866SDCA is a dual N-channel enhancement mode MOSFET manufactured by Taiwan Semiconductor Corporation. It is housed in an 8-TSSOP surface-mount package and operates with a drain-source voltage of 20V and a continuous drain current of 6A at ambient temperature. The device features a maximum on-resistance of 30 milliohms at Vgs=4.5V, ensuring efficient power handling. Key electrical parameters include a gate threshold voltage of 600mV, gate charge of 7nC, and input capacitance of 565pF. It supports a wide operating temperature range from -55°C to +150°C junction temperature with a power dissipation rating of 1.6W.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-resistance for improved power efficiency
- Wide thermal operating range suitable for harsh environments
Applications
- DC-DC converter output stages
- Load switching applications
- Power management circuits
Procurement Notes
Verify component status as the TSM6866SDCA series is marked as Not Recommended for New Designs (NRND) or Obsolete by major distributors. Confirm availability through secondary market channels if required for legacy maintenance. Ensure RoHS compliance documentation matches specific manufacturing dates. Validate that the RVG suffix does not alter functional specifications compared to standard variants.
Selection Notes
Select this component for low-voltage, high-current applications requiring dual channel isolation in a compact footprint. Compare Rds(on) performance against competitors for similar voltage ratings. Consider the 8-TSSOP package constraints for thermal management and PCB layout. Verify compatibility with logic-level drive voltages given the 600mV threshold specification.
Part Context
This part belongs to the TSM6866 family of dual MOSFETs from Taiwan Semiconductor. It serves as a discrete solution for replacing single-channel pairs in power switching topologies. The 8-TSSOP package provides a balance between thermal performance and board space savings compared to larger packages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official manufacturer cross-reference lists or distributor substitution tools for verified alternatives.
